Information storage apparatus using semiconductor probe
AssigneeSamsung Electronics Co., Ltd.
InventorsSeung-bum Hong, Jong Up Jeon, Hyun-jung Shin
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Abstract
An information storage apparatus includes a recording medium and a head. The recording medium has an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film. The head has a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium. Thus, it is possible to manufacture a small-sized information storage apparatus which is capable of repeatedly recording and reproducing information at a high speed.
Claims17
An information storage apparatus using a semiconductor probe, the information storage apparatus comprising:
- a recording medium having an electrode layer, a ferroelectric film that is stacked on the electrode layer, and a semiconductor layer that is stacked on the ferroelectric film;
- and
- a head having a semiconductor probe for forming a dielectric polarization on the ferroelectric film to record information and reproducing information from the dielectric polarizations on the ferroelectric film by making a p-n junction with the recording medium.
Dependencies are inferred from the claim text.