Microelectromechanical systems using thermocompression bonding

An integrated device, comprising:

• a first substrate;
• a device disposed on the first substrate having at least one electrical terminal;
• a bump of conductive bonding material disposed on the first substrate, the bump being in electrical contact with the at least one terminal of the device;
• a bonding feature of conductive material disposed on the first substrate and surrounding at least a portion of the device;
• a second substrate in aligned confronting relation to the first substrate;
• a first target feature of conductive bonding material disposed on the second substrate and bonded to the bump on the first substrate;
• and
• a second target feature of conductive bonding material disposed on the second substrate and bonded to the bonding feature on the first substrate, forming a sealed cavity containing at least a portion of the device, wherein the second target feature is electrically isolated from the bump.

An integrated device, comprising:

• a first substrate;
• a device disposed on the first substrate;
• a first bonding feature made of conductive bonding material disposed on the first substrate;
• a bump of conductive bonding material disposed on the first substrate, the bump being in electrical contact with the device;
• a second substrate substantially aligned in confronting relation to the first substrate;
• a second bonding feature made of conductive bonding material disposed on the second substrate;
• a target feature made of conductive bonding material disposed on the second substrate;
• and
• a wirebond pad disposed on the second substrate and electrically connected to the target feature,
• wherein the first substrate and the second substrate are pressed together with a thermocompression bonding process, the bonding process bonding the first bonding feature disposed on the first substrate to the second bonding feature disposed on the second substrate, sealing the device in a cavity between the first substrate and the second substrate, the bonding process forming an electrical connection between the device and the target feature.

An integrated device, comprising:

• a first substrate;
• a seal ring of conductive bonding material disposed on the first substrate including barrier adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium, disposed on the first substrate;
• a device disposed on the first substrate;
• a bump of conductive bonding material disposed on the first substrate electrically connected to the device,
• wherein the percentage of area bonded is either less than 15 percent of the total surface area of the first substrate or less than 15 percent of the total surface area of the second substrate;
• a second substrate substantially aligned in confronting relation to the first substrate;
• a target feature of conductive bonding material disposed on the second substrate;
• a bonding feature made of conductive bonding material including barrier adhesion layers and at least one noble metal from the group of noble metals including gold, platinum, palladium, iridium and rhodium;
• and
• a wirebond pad disposed on the second substrate outside the bonding feature and electrically connected to the target feature via a trace of conductive bonding material,
• wherein the bonding feature overlaps the trace, and
• wherein the bonding feature and the trace are electrically isolated by a nonconductive material, and
• wherein the first substrate and the second substrate are pressed together with a thermocompression bonding process, the bonding process bonding the seal ring disposed on the first substrate to the bonding feature disposed on the second substrate, and the bonding process forming a sealed cavity between the first and the second substrates containing the device, wherein the device is electrically connected to the wirebond pad and isolated from the seal ring.