Strained Fin FETs structure and method
AssigneeInternational Business Machines Corporation
InventorsWilliam F. Clark, David M. Fried, Louis D. Lanzerotti, Edward J. Nowak
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Abstract
A method and structure for a transistor that includes an insulator and a silicon structure on the insulator. The silicon structure includes a central portion and Fins extending from ends of the central portion. A first gate is positioned on a first side of the central portion of the silicon structure. A strain-producing layer could be between the first gate and the first side of the central portion of the silicon structure and a second gate is on a second side of the central portion of the silicon structure.
Claims18
A fin-type field effect transistor (FinFET) comprising:
- a fin having source and drain regions and a channel region between said source and drain regions;
- and
- a strain-inducing layer on only one side of said channel region of said fin.
A fin-type field effect transistor (FinFET) comprising:
- a fin having source and drain regions and a channel region between said source and drain regions;
- a strain-inducing layer on said channel region of said fin;
- and
- asymmetric gates on opposite sides of said channel region, said asymmetric gates having different conductivity types.
A silicon-over-insulator (SOI) fin-type effect transistor (FinFET) comprising:
- an isolation layer;
- a fin on said isolation layer;
- said fin having source and drain regions and a channel region between said source and drain regions;
- and
- a strain-inducing layer on only one side of said channel region of said fin.
Dependencies are inferred from the claim text.