Method of fabricating a multilayer dielectric tunnel barrier structure
AssigneeMicron Technology, Inc.
InventorJoel A. Drewes
Life of this patent
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Abstract
A multilayer dielectric tunnel barrier structure and a method for its formation which may be used in non-volatile magnetic memory elements comprises an ALD deposited first nitride junction layer formed from one or more nitride monolayers i.e., AlN, an ALD deposited intermediate oxide junction layer formed from one or more oxide monolayers i.e., AlxOy, disposed on the first nitride junction layer, and an ALD deposited second nitride junction layer formed from one or more nitride monolayers i.e., AlN, disposed on top of the intermediate oxide junction layer. The multilayer tunnel barrier structure is formed by using atomic layer deposition techniques to provide improved tunneling characteristics while also providing anatomically smooth barrier interfaces.
Claims59
A method of fabricating a multilayer dielectric tunnel barrier structure for use in semiconductor memory devices, said method comprising:
- providing a substrate supporting a magnetic layer;
- forming an ALD deposited first nitride junction layer over said magnetic layer;
- forming an ALD deposited intermediate junction layer over said first nitride junction layer;
- and
- forming an ALD deposited second nitride junction layer over said intermediate junction layer.
Dependencies are inferred from the claim text.