Indium-tin oxide (ITO) layer and method for producing the same
AssigneeUnaxis Deutschland GmbH
InventorsAndreas Klöppel, Jutta Trube
Life of this patent
Estimating the term…
Abstract
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance of preferably less than 200 μΩcm and a small surface roughness of preferably less than 1 nm on a substrate, wherein combined HF/DC sputtering of an indium-tin oxide (ITO) target is employed and wherein the process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering, as well as ITO-films with the above-named characteristics.
Claims18
A process for the deposition of transparent and conductive indium-tin oxide (ITO) films with a particularly low resistance and a small surface roughness on a substrate, comprising:
- providing a substrate;
- combined HF/DC sputtering of an indium-tin oxide (ITO) target to deposit an ITO film onto the substrate, wherein a process gas is supplemented by an argon/hydrogen mixture as reaction gas during the sputtering and wherein the ITO film has a resistance of less than 200 μΩcm and a surface roughness of less than 1 nm.
Dependencies are inferred from the claim text.