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US 6,848,295 B2Granted
Acoustic wave sensor apparatus, method and system using wide bandgap materials
AssigneeWayne State University
InventorsGregory W. Auner, Feng Zhong, Chantelle Hughes, Gina Shreve, Hao Ying
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Abstract
An acoustic wave sensor to detect an analyte, the sensor comprising a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy.
Claims10
An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
- a micro-machined arrangement having a resonating frequency;
- and
- an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to chance the resonating frequency,
- wherein the immobilization layer includes a chemical linker and wherein the chemical linker is p-maleimidophenyl isocyanate.
2 more elements
An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
- a micro-machined arrangement having a resonating frequency;
- an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency;
- a laser diode arrangement capable of high frequency modulation to generate a pulsed laser light;
- a waveguide arrangement to transport the pulsed laser light;
- and
- a carbon implanted region to receive the pulsed laser light and to provide a bulk wave to the micro-machined arrangement.
4 more elements
An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
- a micro-machined arrangement having a resonating frequency;
- and
- an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency,
- wherein the sensor is operable to detect 5 molecules of 100,000 daltons.
2 more elements
An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
- a micro-machined arrangement having a resonating frequency;
- and
- an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency,
- wherein the sensor is operable to detect a binding of a monolayer of oxygen to less than 1% of a 100 μm×100 μm surface area of the sensor.
2 more elements
A method for operating an acoustic wave sensor, comprising:
- generating an acoustic wave;
- directing the acoustic wave to transverse a micro-machined arrangement;
- detecting a resonating frequency of the micro-machined arrangement;
- determining a presence of an analyte based on the detected resonating frequency, wherein the analyte contains a target structure that binds to an immobilization layer of the micro-machined arrangement;
- providing a laser light from a laser diode via a waveguide arrangement;
- and
- receiving the laser light in a carbon-implanted region.
4 more elements
An acoustic wave sensor to detect an analyte, comprising:
- a piezoelectric material including a wide bandgap semiconductor material grown using plasma source molecular beam epitaxy;
- a micro-machined arrangement having a resonating frequency;
- and
- an immobilization layer traversing the micro-machined arrangement, the layer containing a binding site to allow a target structure of the analyte to bind to the micro-machined arrangement so as to change the resonating frequency, wherein:
- the micro-machined arrangement includes a wide bandgap semiconductor material;
- the sensor is operable in a surface acoustic mode;
- the sensor is operable in a surface transverse mode;
- the sensor is operable in a liquid medium and maintains a high sensitivity without a severe attenuation;
- the immobilization layer includes a chemical linker;
- and
- the chemical linker is p-maleimidophenyl isocyanate.
8 more elements
Dependencies are inferred from the claim text.