Semiconductor light emitting devices

A III-nitride light emitting device comprising:

• a first layer of first conductive type;
• a first layer of second conductive type;
• an active region;
• a tunnel junction, the tunnel junction comprising:
• a second layer of first conductivity type having a dopant concentration greater than the first layer of first conductivity type;
• and
• a second layer of second conductivity type having a dopant concentration greater than the first layer of second conductivity type;
• a third layer of first conductivity type;
• a first contact electrically connected to the first layer of first conductivity type;
• and
• a second contact electrically connected to the third layer of first conductivity type;
• wherein
• the first and second contacts comprise the comprise the same material;
• the first and second contact material has a reflectivity to light emitted by the active region greater than 75%;
• the active region is disposed between a layer of first conductivity type and a layer of second conductivity type;
• and
• the tunnel junction is disposed between the first layer of first conductive type and the third layer of first conductivity type.