Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
AssigneeApplied Materials, Inc.
InventorKent Rossman
Life of this patent
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Abstract
Embodiments of the present invention include a method of depositing an improved seasoning film. In one embodiment the method includes, prior to performing a substrate processing operation, forming a layer of silicon over an interior surface of the substrate processing chamber as opposed to a layer of silicon oxide. In certain embodiments, the layer of silicon comprises at least 70% atomic silicon, is deposited from a high density silane (SinH2n+2) process gas and/or is deposited from a plasma having a density of at least 1×1011 ions/cm3.
Claims10
A method of operating a substrate processing chamber, said method comprising:
- prior to a substrate processing operation and prior to transferring a substrate into the substrate processing chamber, forming a protective layer over an interior surface of said substrate processing chamber, the protective layer comprising a layer of silicon and a layer of silicon oxide formed over the layer of silicon.
A method of operating a substrate processing chamber, said method comprising:
- prior to a substrate processing operation, forming over an interior surface of said substrate processing chamber a protective layer comprising a layer of silicon and a layer of silicon oxide formed over the layer of silicon;
- transferring a substrate into said substrate processing chamber after forming said silicon layer, wherein said substrate includes an aluminum layer formed thereon and wherein an outer strata of said aluminum layer comprises aluminum fluoride;
- and
- processing said substrate in said substrate processing chamber to deposit a dielectric layer over said substrate.
Dependencies are inferred from the claim text.