Cell structure for bipolar integrated circuits and method

A bipolar cell comprising

• a cell active area;
• a first array of bipolar transistors within the cell active area, wherein the bipolar transistors within the first array are parallel to each other;
• a second array of bipolar transistors within the cell active area, wherein the bipolar transistors within the second array are parallel to each other and substantially perpendicular to the first array of bipolar transistors, and wherein at least one bipolar transistor in the second array comprises a base/emitter/collector/emitter/base configuration.

An integrated circuit comprising:

• a bipolar device array including a device active area, wherein the bipolar device array is formed on a semiconductor substrate;
• a first array of at least two bipolar transistors formed within the device active area, wherein the bipolar transistors in the first array are parallel to each other;
• a second array of at least two bipolar transistors formed within the device active area, wherein the bipolar transistors in the second array are parallel to each other and substantially orthogonal to the bipolar transistors in the first array.

A method for forming an integrated circuit comprising the steps of:

• providing a semiconductor substrate having a first major surface;
• and
• forming a bipolar device array on the first major surface, wherein the bipolar device array includes a device active area, a first array of at least two bipolar transistors within the device active area, and a second array of at least two bipolar transistors within the device active area, wherein the bipolar transistors in the first array are parallel to each other, and wherein the bipolar transistors in the second array are parallel to each other and substantially perpendicular to the bipolar transistors in the first array.