Method of film deposition using activated precursor gases
AssigneeApplied Materials, Inc.
InventorsHua Chung, Ling Chen, Vincent W. Ku
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Abstract
A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
Claims24
A method for depositing a film on a substrate surface, comprising:
- providing a metal-containing precursor to an activation zone;
- activating the metal-containing precursor to form an activated metal precursor, wherein activating the metal-containing precursor comprises reacting the metal-containing precursor with a gas phase material containing one or more metallic species selected from the group consisting of sodium, potassium, rubidium, cesium, francium, lithium, beryllium, magnesium, calcium, strontium, barium, radium, and combinations thereof;
- and
- alternately adsorbing the activated metal precursor and a first reducing gas to deposit the film on the substrate surface.
A method for forming a film on a substrate, comprising:
- providing a metal-containing precursor to an activation zone;
- activating the metal-containing precursor to form an activated precursor gas, wherein activating the metal-containing precursor comprises reacting the metal-containing precursor with a gas phase material containing one or more metallic species selected from the group consisting of sodium, potassium, rubidium, cesium, francium, lithium, beryllium, magnesium, calcium, strontium, barium, radium, and combinations thereof;
- providing a first reducing gas to the activation zone;
- activating the first reducing gas to form an activated reducing gas;
- and
- depositing the film on the substrate using a cyclical deposition process, wherein the activated reducing gas and the active precursor gas are alternately adsorbed on the substrate.
A method for depositing a film on a substrate surface, comprising:
- providing a tantalum-containing precursor to an activation zone;
- activating the tantalum-containing precursor to form an activated tantalum-precursor by reacting the tantalum-containing precursor with a material containing one or more elements selected from the group consisting of sodium, potassium, rubidium, cesium, francium, lithium, beryllium, magnesium, calcium, strontium, barium, radium, and combinations thereof;
- and
- alternately pulsing the activated tantalum-precursor and a reductant to deposit the film.
A method for depositing a film on a substrate surface, comprising:
- providing PDMAT to an activation zone;
- activating the PDMAT to form an activated tantalum-precursor by reacting the PDMAT with a material containing one or more elements selected from the group consisting of sodium, potassium, rubidium, cesium, francium, lithium, beryllium, magnesium, calcium, strontium, barium, radium, and combinations thereof;
- and
- alternately pulsing the activated tantalum-precursor and ammonia to deposit the film.
A method for depositing a film on a substrate surface, comprising:
- providing a metal-containing precursor to an activation zone;
- activating the metal-containing precursor to form an activated metal-precursor by reacting the metal-containing precursor with a material containing one or more elements selected from the group consisting of sodium, potassium, rubidium, cesium, francium, lithium, beryllium, magnesium, calcium, strontium, barium, radium, and combinations thereof;
- and
- sequentially exposing the substrate surface to pulses of the activated metal-precursor and a reductant to deposit the film.
Dependencies are inferred from the claim text.