Polishing pad
AssigneeRogers Inoac Corporation
InventorSeigo Hishiki
Life of this patent
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Abstract
A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.
Claims12
A polishing pad comprising a polyurethane-based foam having a desired shape obtained by a process which comprises mixing a polyurethane or polyurea as a main raw material with various subsidiary raw materials, dissolving an inert gas in the mixture under pressure to obtain a gas-dissolved raw material, and then injecting the gas-dissolved raw material into a reaction injection mold by a reaction injection molding method, wherein the polyurethane-based foam has small and uniform cells suitable for polishing semiconductor material obtained by the reaction in the injection mold.
Dependencies are inferred from the claim text.