Nanostructures for hetero-expitaxial growth on silicon substrates
OwnerSaleem H. Zaidiinventor
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Abstract
Selected micro- and nanoscale, 1-dimensional and 2-dimensional periodic and random structures generated on silicon and other substrates are expected to perform as compliant, thin films for gettering defects and for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth thereon, thereby leading to relatively defect-free, heteroepitaxial films of chosen thicknesses. The as-grown epilayers or completed electronic and optoelectronic devices can be bonded to a second substrate such as glass, or plastic following separation thereof from the substrate on which they were formed using preferential etching of a readily detachable, nanoporous silicon or silicon dioxide layer introduced between the generated structures and the substrate.
Claims53
A method for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth, comprising the steps of:
- (a) forming a grating structure on the surface of a substrate;
- (b) generating a readily etchable layer physically separating the grating structure from the substrate;
- and
- (c) growing a heteroepitaxial layer on the grating structure, whereby lattice and thermal expansion mismatches between the substrate and the epitaxially grown compound are reduced.
A method for accommodating lattice and thermal expansion mismatches during heteroepitaxial growth, comprising the steps of:
- (a) forming a randomly etched structure on the surface of a substrate;
- and
- (b) growing a heteroepitaxial layer on the grating structure, whereby lattice and thermal expansion mismatches between the substrate and the epitaxially grown compound are reduced.
An apparatus for growing heteroepitaxial materials, comprising in combination:
- (a) a substrate having a substantially flat surface;
- and
- (b) a grating structure formed on the surface of said substrate, said grating structure being physically separated from said substrate by a readily etchable layer, whereby heteroepitaxial materials grown on said grating structure have reduced lattice and thermal expansion mismatches.
An apparatus for growing heteroepitaxial materials, comprising in combination:
- (a) a substrate having a substantially flat surface;
- and
- (b) a randomly etched structure formed on the surface of said substrate, whereby heteroepitaxial materials grown on said randomly etched surface have reduced lattice and thermal expansion mismatches.
Dependencies are inferred from the claim text.