Semiconductor imaging device having a refractive index matching layer

A semiconductor imaging device comprising:

• a plurality of imaging elements;
• and
• an insulating compound layer provided as a layer above the imaging elements,
• wherein the insulating compound layer is represented by SiOxNy (0≦x and y) and a molar ratio of silicon, oxygen and nitrogen of the insulating compound layer is 1:x:y, an oxygen content is lowest closest to the imaging elements and highest in an upper portion of the insulating compound layer, and a nitrogen content is highest closest to the imaging elements and lowest in an upper portion of the insulating compound layer.

A semiconductor device for photoelectrically converting received light to output a received light signal comprising:

• a semiconductor substrate;
• a plurality of light receiving elements for photoelectric conversion, which are formed on the semiconductor substrate;
• and
• a refractive index matching film provided above each of the light receiving elements,
• wherein the refractive index matching film comprises a compound layer represented by SiOxNy (0≦x and y) assuming that the molar ratio of silicon, oxygen and nitrogen of the compound layer is 1:x:y, the oxygen content of the compound layer is lowest closest to each light receiving element and highest in an upper portion of the compound layer, and the nitrogen content of the compound layer is highest closest to each light receiving element and lowest in an upper portion of the compound layer.