Self-light-emitting device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToshimitsu Konuma, Junya Maruyama
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Abstract
Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.
Claims62
A self-light-emitting device comprising:
- a TFT;
- a pixel electrode over said TFT;
- a light emitting layer over said pixel electrode;
- and
- a cathode over said light emitting layer,
- wherein said pixel electrode comprises an electrode hole which is filled up with an insulator comprising an organic resin, and
- wherein said pixel electrode is connected to said TFT.
A self light-emitting device comprising:
- a TFT;
- a pixel electrode over said TFT;
- a light emitting layer over said pixel electrode;
- and
- a cathode over said light emitting layer,
- wherein said pixel electrode comprises an electrode hole which is filled up with an insulator comprising an organic resin,
- wherein said pixel electrode is connected to said TFT, and
- wherein said insulator in said electrode hole is sandwiched between said pixel electrode and said light emitting layer.
A self-light-emitting device comprising:
- a TFT;
- a pixel electrode over said TFT;
- a light emitting layer over said pixel electrode;
- and
- a cathode over said light emitting layer,
- wherein said pixel electrode comprises an electrode hole which is filled up with an insulator comprising an organic resin,
- wherein said pixel electrode is connected to said TFT, and
- wherein said light emitting layer is also formed over a surface of said insulator.
A self-light-emitting device comprising:
- a TFT;
- a pixel electrode over said TFT;
- a light emitting layer over said pixel electrode;
- and
- a cathode over said light emitting layer,
- wherein said pixel electrode comprises an electrode hole which is filled up with an insulator comprising an organic resin,
- wherein said pixel electrode is connected to said TFT, and
- wherein said light emitting layer and said insulator are sandwiched between said pixel electrode and said cathode.
A self-light-emitting device comprising:
- a plurality of TFTs;
- a plurality of pixel electrodes over said TETs;
- a light emitting layer over said pixel electrodes;
- and
- a cathode over said light emitting layer,
- wherein said pixel electrodes are connected to said TETs, respectively,
- wherein a plurality of said pixel electrodes are formed in a pixel portion and an insulator is formed in at least one of spaces between said pixel electrodes, and
- wherein a thickness of a portion of the insulator higher than a top surface of the pixel electrodes is 0.1 to 1 μm.
A self-light-emitting device comprising:
- at least one electric current controlling element;
- at least one interlayer insulating film formed over said electric current controlling element;
- a contact hole opened in said interlayer insulating film;
- a pixel electrode formed over said interlayer insulating film and electrically connected to said electric current controlling element through said contact hole;
- an insulating layer comprising an organic resin formed over a portion of said pixel electrode in said contact hole;
- a light emitting layer formed over said pixel electrode and said insulating layer;
- and
- a second electrode formed over said light emitting layer.
A self-light-emitting device comprising:
- at least first and second switching elements;
- at least one interlayer insulating film formed over said first and second switching elements;
- at least first and second pixel electrodes formed over said interlayer insulating film
- wherein said first and second pixel electrodes are electrically connected to said first and second switching elements, respectively;
- an insulating layer formed in a gap between said first and second pixel electrodes;
- a light emitting layer formed over said first and second pixel electrodes and said insulating layer;
- and
- a third electrode formed over said light emitting layer opposed to said first and second pixel electrodes,
- wherein a thickness of a portion of the insulating layer higher than a top surface of the pixel electrodes is 0.1 to 1 μm.
Dependencies are inferred from the claim text.