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AssigneeLam Research Corporation
InventorsRobert J. O'Donnell, John E. Daugherty
Estimating the term…
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating. To promote adhesion of the cerium oxide containing ceramic coating, the component surface or the intermediate layer surface may be subjected to a surface roughening treatment prior to depositing the cerium oxide containing ceramic coating.
A component of semiconductor processing equipment, the component comprising an aluminum substrate having an anodized surface and a plasma sprayed ceramic layer of cerium oxide containing ceramic material on the anodized surface of the substrate and forming an outermost surface of the component, wherein the cerium oxide containing ceramic material (a) consists essentially of one or more cerium oxides or (b) consists essentially of one or more cerium oxides as the single largest constituent thereof and an oxide of an element of the lanthanide series.
A component of semiconductor processing equipment, the component having a cerium oxide containing ceramic material forming an outermost surface of the component, the component being selected from the group consisting of a plasma chamber wall, a chamber liner, a gas distribution plate, a gas ring, a pedestal, a dielectric window, an electrostatic chuck, and a focus ring, and the cerium oxide containing ceramic material comprising one or more cerium oxides as the single largest constituent thereof, wherein the cerium oxide containing ceramic material is a ceramic layer on a ceramic substrate selected from the group consisting of alumina, silicon carbide, silicon nitride, boron carbide and boron nitride.
A component semiconductor processing equipment, the component comprising:
A component of semiconductor processing equipment selected from the group consisting of a plasma chamber wall, a chamber liner, a gas distribution plate, a gas ring, a pedestal, a dielectric window, an electrostatic chuck and focus ring, the component comprising:
Dependencies are inferred from the claim text.