Resonator with seed layer
AssigneeAgilent Technologies, Inc.
InventorsPaul D. Bradley, Donald Lee, Domingo A. Figueredo
Life of this patent
Estimating the term…
Abstract
A thin-film resonator having a seed layer and a method of making the same are disclosed. The resonator is fabricated having a seed layer to assist in the fabrication of high quality piezoelectric layer for the resoantor. The resonator has the seed layer, a bottom electrode, piezoelectric layer, and a top electrode. The seed layer is often the same material as the piezoelectric layer such as Aluminum Nitride (AlN).
Claims13
A resonator fabricated on a substrate, the resonator comprising:
- a seed layer portion;
- a bottom electrode on said seed layer;
- piezoelectric portion on said bottom electrode;
- and
- a top electrode on said piezoelectric portion.
An electronic filter comprising a resonator fabricated on a substrate, the resonator comprising:
- a seed layer portion comprising Aluminum Nitride having a thickness ranging from 10 Angstroms to 10,000 Angstroms;
- a bottom electrode on said seed layer portion, said bottom layer comprising Molybdenum;
- piezoelectric portion on said bottom electrode, said piezoelectric portion comprising Aluminum Nitride;
- and
- a top electrode on said piezoelectric portion, said top electrode comprising Molybdenum.
A method of fabricating a resonator, the method comprising:
- fabricating a seed layer on a substrate;
- fabricating a bottom electrode on said seed layer;
- fabricating piezoelectric portion on said bottom electrode;
- and
- fabricating a top electrode on said piezoelectric portion.
Dependencies are inferred from the claim text.