US 6,828,599 B2 · Semiconductor light-emitting diode

Abstract

The present invention relates to a semiconductor LED device comprising a pumping layer with high light emitting efficiency and an active layer with smaller bandgap converting the absorbed light into any kinds of light of wavelength as required, which generates light from the AlGaInN pumping layer containing less In, projects the rays of light on the active layer containing more In, lets the required light of wavelength emit and decreases the blue shift caused by electric current, thereby increasing the light emitting efficiency and emitting lights with more than two wavelengths from one Led device. This invention enables to obtain various light of wavelength from one device and form the element through only one epitaxy process, thereby increasing reproductivity, yield, and efficiency by not using the fluorescent materials lowering the efficiency when forming white light.

Claims6

Dependent claims

A semiconductor LED device, comprising:

a substrate;
a buffer layer formed on the substrate;
a first n-type AlGaInN layer formed on the buffer layer;
an active layer formed on the first n-type AlGalnN layer;
a second n-type AlGaInN layer formed on the active layer;
a pumping layer formed on the second n-type AlGaInN layer;
a p-type AlGaInN layer formed on the pumping layer;
a p-type electrode contacted with the p-type AlGaInN layer;
and
a n-type electrode contacted with the second n-type AlGaInN layer, wherein the pumping layer has larger bandgap than that of the active layer and emits light by recombination of electrons from the second n-type AlGaInN layer and holes from the p-type AlGaInN layer, and the active layer emits light by using light emitted from the pumping layer.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor light-emitting diode

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Semiconductor light-emitting diode

Life of this patent

Abstract

Claims6