Thin film transistor, display device and their production
AssigneeHitachi, Ltd.
InventorsMasahiko Ando, Masatoshi Wakagi, Hiroshi Sasaki
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Abstract
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
Claims12
A thin film transistor comprising a gate electrode, a gate insulation film, a source electrode, a drain electrode, a semiconductor film and a protection film, stacked on a substrate, wherein the semiconductor film is composed of an aggregate of organic semiconductor molecules, and the organic semiconductor molecules of the semiconductor film formed in a gate electrode-projected region on a surface of the insulation film have a higher orientation order than that of the semiconductor film formed outside the region.
Dependencies are inferred from the claim text.