Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus

A semiconductor manufacturing method, comprising the steps of:

• exchanging a substrate between a preliminary chamber and an external part;
• subjecting the substrate to predetermined processing in a process chamber;
• and
• transferring the substrate through a transfer chamber provided between said preliminary chamber and said process chamber,
• wherein said substrate transferring step comprises the following three steps:
• a first step of transferring said substrate from said preliminary chamber to said transfer chamber;
• a second step of holding in said transfer chamber said substrate transferred to said transfer chamber;
• and
• a third step of transferring said substrate from said transfer chamber to said process chamber;
• and
• wherein an inert gas is continuously supplied and exhausted to and from all of said three chambers during said three steps of said substrate transferring step.

A semiconductor manufacturing method, comprising the steps of:

• exchanging a substrate between a preliminary chamber and an external part;
• subjecting the substrate to predetermined processing in a process chamber;
• and
• transferring the substrate through a transfer chamber provided between said preliminary chamber and said process chamber,
• wherein said substrate transferring step comprises the following three steps:
• a first step of transferring said substrate from said preliminary chamber to said transfer chamber;
• a second step of holding in said transfer chamber said substrate transferred to said transfer chamber;
• and
• a third step of transferring said substrate from said transfer chamber to said process chamber, and
• wherein an inert gas is continuously supplied to all of said chambers coupled to a vacuum pump among said three chambers and exhausted from this chamber using said vacuum pump during said three steps of said substrate transferring step.

A substrate processing method, comprising:

• a first step of carrying a substrate into a preliminary chamber from an external part;
• a second step of continuously supplying and exhausting an inert gas to and from said preliminary chamber at least from a time before opening a first sate between said preliminary chamber and a transfer chamber, after the substrate is carried into said preliminary chamber;
• a third step of transferring said substrate to said transfer chamber from said preliminary chamber, in a state in which the inert gas is continuously supplied and exhausted to and from said preliminary chamber and said transfer chamber, after said first gate valve is opened;
• a fourth step of transferring said substrate to a process chamber from said transfer chamber in a state in which the inert gas is continuously supplied and exhausted to and from said transfer chamber and said process chamber, after a second gate valve between said transfer chamber and said process chamber is opened;
• and
• a fifth step of subjecting said substrate to predetermine processing in said process chamber.

A semiconductor manufacturing method, comprising the steps of:

• exchanging a substrate between a preliminary chamber and an external part;
• subjecting the substrate to predetermined processing in a process chamber;
• and
• transferring the substrate through a transfer chamber provided between said preliminary chamber and said process chamber,
• wherein said substrate transferring step comprises the following three steps:
• a first step of transferring said substrate from said preliminary chamber to said transfer chamber;
• a second step of holding in said transfer chamber said substrate transferred to said transfer chamber;
• and
• a third step of transferring said substrate from said transfer chamber to said process chamber, and
• wherein at least one vacuum pump is coupled to said three chambers, and in this vacuum pump, an inert gas is continuously introduced into the vacuum pump from an upstream side of the vacuum pump, and the vacuum pump operates to exhaust the inert gas in all the chambers, during said three steps of said substrate transferring step.

A semiconductor manufacturing method, comprising the steps of:

• exchanging a substrate between a preliminary chamber and an external part;
• subjecting the substrate to predetermined processing in a process chamber;
• and
• transferring the substrate through a transfer chamber provided between said preliminary chamber and said process chamber,
• wherein an inert gas is continuously supplied and exhausted to and from said preliminary chamber during said substrate transferring step.

A semiconductor manufacturing method, comprising the steps of:

• exchanging a substrate between a preliminary chamber and an external part;
• subjecting the substrate to predetermined processing in a process chamber, and
• transferring the substrate through a transfer chamber provided between said preliminary chamber and said process chamber, the method further comprising the step of:
• continuously supplying and exhausting an inert gas to and from the preliminary chamber during a period in which the substrate is present within said preliminary chamber after the substrate is transferred into said preliminary chamber.