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US 6,825,303 B2Granted
Integration of low ε thin films and Ta into Cu dual damascene
AssigneeDielectric Systems, Inc.
InventorChung J. Lee
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Abstract
New precursors and processes to generate fluorinated poly(para-xylylenes) (“PPX”) and their chemically modified films suitable for fabrications of integrated circuits (“ICs”) of <0.15 μm are disclosed. The films so prepared have low dielectric constants (“∈”) and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of ICs can be assured.
Claims16
A polymer film prepared from a method comprising:
- co-polymerizing an intermediate (A) and an intermediate (B);
- wherein,
- intermediate (A) and intermediate (B) are co-polymerized at a feed rate onto a substrate having a substrate temperature under vacuum or inert atmosphere with a slow system leakage rate, the substrate temperature being below a melting temperature of the intermediate (A);
- the intermediate (A) is an aromatic compound consisting of n′ reactive sites with n′ unpaired electrons and n′ is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp2C substitution in the intermediate (A)
- the intermediate (B) is a bridging compound consisting of n″ reactive sites with n″ unpaired electrons;
- and n″ is an integer of at least 2 but is smaller than, or equal to, the maximum number of sites for the sp3C substitution in the intermediate (B);
- and
- the polymer film has a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit.
5 more elements
A fluorinated polymer film prepared from a method comprising:
- co-polymerizing at least two reactive intermediates;
- wherein,
- the reactive intermediates are co-polymerized at a feed rate onto a substrate having a substrate temperature under vacuum or inert atmosphere with a slow system leakage rate;
- and
- the fluorinated polymer film has a thermal stable crystalline form suitable for use as a dielectric thin film in fabrication of an integrated circuit, and the fluorinated polymer film comprises fully fluorinated or partially fluorinated polymers.
2 more elements
Dependencies are inferred from the claim text.