Stacked film, insulating film and substrate for semiconductor

A method for the production of a stacked film, which comprises:

• forming (A) a film of an organic compound having a carbon content of 60% by weight or more comprising at least one recurring structural unit selected from the group consisting of the following formulae (1), (2) and (3):
• wherein R7 to R11 each independently represents a hydrocarbon group having from 1 to 20 carbon atoms, a cyano group, a nitro group, an alkoxyl group hawing from 1 to 20 carbon atoms, an aryl group, or a halogen atom;
• X represents at least one member selected from the group consisting of a group represented by —CQQ′-, wherein Q and Q′ may be the same or different and each represents a halogenated alkyl group, an alkyl group, a hydrogen atom, a halogen atom, or an aryl group, and a fluorenylene group;
• Y represents at least one member selected from the group consisting of —O—, —CO—, —COO—, —CONH, —S—, —SO2—, and a phenylene group;
• a represents 0 or 1;
• b to f each represents an integer of from 0 to 4;
• g is from 5 to 100 mole %, h is from 0 to 95 mole %, and l is from 0 to 95 mole %, provided that the total sum of g, h and i is 100 mole %;
• j is from 0 to 100 mole %, and k is from 0 to 100 mole %, provided that the total sum of j, and k is 100 mole %;
• and A and B each independently represents at least one group selected from the group consisting of divalent aromatic groups represented by the following formulae (4), (5) and (6):
• wherein R12, R13, R18, and R19 each independently represents a single bond,
• a phenylene group, an isopropylidene group, a hexafluoroisopropylidene group, a diphenylmethylidene group, or a fluorenylene group;
• R14 to R16, R17, and R20 to R22 each independently represents a hydrocarbon group having from 1 to 20 carbon atoms, a cyano group, a intro group, or an alkoxyl group having from 1 to 20 carbon atoms, an aryl group;
• 1 and q each independently represents an integer of from 0 to 3;
• and M, to p and r to t each independently represents an integer of from 0 to 4,
• on a substrate containing Si and further containing at least one element selected from the group consisting of O, C, N and H;
• and
• forming, on the film (A), (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of compounds represented by the following formulae (51), (52), (53) and (54)
• HSi(OR51)3 (51)
• wherein R51 represents a monovalent organic group,
• RaSi(OR52)4-a′ (52)
• wherein R represents a fluorine atom or a monovalent organic group;
• R52 represents a monovalent organic group;
• and a′ represents an integer of from 1 to 2,
• Si(OR53)4 (53)
• wherein R53 represents a monovalent organic group, and
• R54b′(R55O)3-b′Si—R58)d′—Si(OR56)3-c′R57c′ (54)
• wherein R54 to R57 may be the same or different and each represents a monovalent organic group;
• b′ and c′ may be the same or different and each represents a number of from 0 to 2;
• R58 represents an oxygen atom, a phenylene group, or a group represented by —(CH2)n′—, wherein n′ represents an integer of from 1 to 6;
• and d′ represents 0 or 1;
• and
• further forming a film containing Si and at least one element selected from the group consisting of O, C, N and H, on the film (B).