Manufacturing method of semiconductor laser diode

A manufacturing method of a buried ridge type semiconductor optical device comprising the steps of:

• forming a layered film in which a first cladding layer, an active layer, and a second cladding layer are layered on a semiconductor substrate at least the first cladding layer comprises an Al-containing material;
• selectively etching a predetermined pattern region so as to decrease a thickness of the first cladding layer by using an etching method at least including wet etching, thereby forming a stripe structure having a sidewall in which the Al-containing material is exposed to part of the sidewall;
• placing the semiconductor substrate formed with the stripe structure in a crystal growing apparatus, and introducing a halogen element-containing gas into the crystal growing apparatus, thereby cleaning the sidewall;
• and
• depositing a semiconductor film in a region adjacent to the sidewall in the crystal growing apparatus subsequently to the cleaning, thereby forming a semiconductor buried film in which the semiconductor film is joined with the sidewall without deteriorating crystallinity of the semiconductor film.

A manufacturing method for an optical element of an optical module comprising the steps of:

• forming a layered film in which a first cladding layer, an active layer, and a second cladding layer are layered on a semiconductor substrate and at least the first cladding layer comprises an Al-containing material;
• selectively etching a predetermined pattern region so as to decrease a thickness of the first cladding layer by using an etching method at least including wet etching, thereby forming a stripe structure having a sidewall in which the Al-containing material is exposed to part of the sidewall;
• placing the semiconductor substrate formed with the stripe structure in crystal growing apparatus, and introducing a halogen element-containing gas into the crystal growing apparatus, thereby cleaning the sidewall;
• and depositing the semiconductor film in a region adjacent to the sidewall in the crystal growing apparatus subsequently to the cleaning, thereby forming a semiconductor buried film in which the semiconductor film is joined with the sidewall without deteriorating crystallinity of the semiconductor film wherein the semiconductor or film is mounted on at least a portion of the semiconductor substrate and wherein the optical element is mounted on at least a portion of the semiconductor substrate.