Low-resistance ITO thin film and method for manufacturing such a film
AssigneeHoya Corporation
InventorsHiromichi Ohta, Masahiro Orita
Life of this patent
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Abstract
A low-resistance ITO thin film having a resistivity on the order of, or lower than 10−4 Ωcm, and a method for manufacturing such a film are disclosed. The ITO thin film is manufactured by depositing ITO on a crystalline substrate by pulsed laser deposition, low-voltage sputtering, oxygen cluster beam deposition, chemical vapor deposition, metal organic chemical vapor deposition, metal organic chemical vapor deposition—atomic layer deposition, or molecule beam epitaxy.
Claims13
A low resistance ITO thin film having a resistivity less than 1×10−4 Ωcm, said film deposited on a single crystalline substrate having a crystal face selected from the group consisting of a YSZ single crystal (100) face, a YSZ single crystal (111) face, a 3C-SiC single crystal (100) face, a CaF2 single crystal (100) face, a MgO single crystal (100) face, a 6H-SiC single crystal (0001) face and a ZnO (0001) face.
A low resistance ITO thin film having a resistivity less than about 1×10−4 Ωcm deposited on a c-axis-oriented ZnO film provided on a crystalline substrate, said low resistance ITO thin film being deposited by epitaxial growth.
A low resistance ITO thin film having a resistivity less than about 1×10−4 Ωcm deposited on a c-axis oriented ZnO film provided on a glass substrate, said low resistance ITO thin film being deposited by epitaxial growth.
Dependencies are inferred from the claim text.