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US 6,815,875 B2Granted
Electron source having planar emission region and focusing structure
AssigneeHewlett-Packard Development Company, L.P.
InventorsHuei-Pei Kuo, Henryk Birecki, Si-Ty Lam, Steven Louis Naberhuis
Life of this patent
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Abstract
An electron source includes a planar emission region for generating an electron emission, and a focusing structure for focusing the electron emission into an electron beam.
Claims19
An electron source comprising:
- an active substrate;
- a layer on the substrate, the layer including a planar porous silicon electron emission region;
- a patterning mask on a surface of the layer, an opening in the patterning mask defining the emission region;
- and
- a focusing structure for the emission region.
2 more elements
The electron source comprising:
- a planar electron emission region;
- and
- a focusing structure for the emission region, the focusing structure including an aperture through which an electron emission is focused;
- the emission region smaller in size than the focusing structure aperture, the emission region no more than 95% of focusing structure aperture size.
1 more element
An electron source comprising:
- a planar electron emission region;
- and a focusing structure for the emission region, the emission region limited in area to less than 1% of available area for emission.
An electron source comprising:
- means including a porous semiconductor material having a region for electron emission, the region limited in area to less than 1% of available area for electron emission;
- and
- means for focusing the electron emission into an electron beam.
Dependencies are inferred from the claim text.