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US 6,815,721 B2Granted
Diamond semiconductor and diamond semiconductor light-emitting device that uses the semiconductor
AssigneeAgency of Industrial Science & Technology, Ministry of International Trade & Industry
InventorsHideyo Okushi, Hideyuki Watanabe, Daisuke Takeuchi, Koji Kajimura
Life of this patent
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Abstract
A diamond semiconductor has an exciton light-emission intensity characteristic that varies nonlinearly.
Claims4
A diamond semiconductor light-emitting device comprising:
- an n-type diamond semiconductor layer;
- a p-type diamond semiconductor layer formed while maintaining a predetermined interval between it and said n-type diamond semiconductor layer;
- and
- a high-quality undoped diamond semiconductor layer sandwiched between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer and fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%,
- wherein an exciton light emission that varies nonlinearly according to a current value is output from said undoped diamond semiconductor layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
2 more elements
A diamond semiconductor light-emitting device comprising:
- a high-quality n-type diamond semiconductor layer fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%;
- a high-quality p-type diamond semiconductor layer formed in contact with said n-type diamond semiconductor layer and fabricated using a raw gas including a methane gas and a hydrogen gas in a microwave plasma chemical vapor deposition method, in which the methane gas has a concentration of not more than 2.0%;
- and
- an activation region layer formed in an interface between said n-type diamond semiconductor layer and said p-type diamond semiconductor layer,
- wherein an exciton light emission that varies nonlinearly according to a current value is output from the activation region layer when current is injected to respective electrodes formed on said n-type and p-type diamond semiconductor layers.
2 more elements
Dependencies are inferred from the claim text.