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US 6,815,241 B2Granted
GaN structures having low dislocation density and methods of manufacture
AssigneeCAO Group, Inc.
InventorTao Wang
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Abstract
Included in the invention are laminates having layers of group III-V materials having low dislocation densities, semiconductor devices fabricated using low dislocation density group III-V layers, and methods for making these structures. Some of the inventions are concerned with GaN layers, GaN semiconductor devices, and semiconductor lasers fabricated from GaN materials. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.
Claims16
A method of making a laminate material having regions of low-dislocation density, comprising:
- depositing a low temperature buffer layer of group III-V material on a substrate;
- depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs;
- removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;
- removing the deposited pattern mask;
- depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands;
- and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density.
3 more elements
A method of making a laminate material having regions of low-dislocation density, comprising:
- depositing a low temperature buffer layer of group III-V material on a substrate, said depositing being performed by a vapor phase deposition technique at a temperature from about 200° C. to about 600° C., said depositing forming a low temperature buffer layer having a thickness of about 10 to about 50 nm.;
- depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs, the troughs being oriented in the <1{overscore (1)}00> direction of the low temperature buffer material, the troughs separating the islands of low temperature buffer layer material by about 10 to about 500 μm.;
- removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;
- removing the deposited pattern mask;
- depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands, said depositing a vertically grown layer performed by a vapor phase deposition technique while maintaining the substrate at a temperature greater than 1000° C., said depositing a vertically grown layer producing layers having thicknesses of about 0.7 to about 1.0 μm.;
- and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density, said depositing a continuous high temperature group III-V layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature of about 800° C. to about 1300° C., said depositing a continuous high temperature group III-V layer deposits a layer having a thickness of about 2 to about 100 μm.
3 more elements
A product of laminate material having regions of low-dislocation density, the product made by the process of:
- depositing a low temperature buffer layer of group III-V material on a substrate, said depositing being performed by a vapor phase deposition technique while maintaining the substrate at a temperature from about 200° C. to about 600° C., said depositing forming a low temperature buffer layer having a thickness of about 10 to about 50 nm.;
- depositing a pattern mask on the low temperature buffer layer, said pattern mask having a pattern intended to produce islands of low temperature buffer material separated by troughs, the troughs being oriented in the <1{overscore (1)}00> direction of the low temperature buffer material, the troughs separating the islands of low temperature buffer layer material by about 10 to about 500 μm.;
- removing material from the low temperature buffer layer exposed by the pattern mask forming a formed low temperature buffer layer;
- removing the deposited pattern mask;
- depositing vertically grown high temperature group III-V layers adhering to the formed low temperature buffer layer islands, said depositing a vertically grown layer performed by a vapor phase deposition technique while maintaining the substrate at a temperature greater than 1000° C., said depositing a vertically grown layer producing layers having thicknesses of about 0.7 to about 1.0 μm.;
- and depositing a continuous high temperature group III-V layer adhering to the vertically grown high temperature layer, the continuous high temperature layer having exposed regions of low dislocation density, said depositing a continuous high temperature group III-V layer is performed by a vapor phase deposition technique while maintaining the substrate at a temperature of about 800° C. to about 1300° C., said depositing a continuous high temperature group III-V layer deposits a layer having a thickness of about 2 to about 100 μm.
3 more elements
Dependencies are inferred from the claim text.