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US 6,812,549 B2Granted
Wiring board and fabricating method thereof, semiconductor device and fabricating method thereof, circuit board and electronic instrument
AssigneeSeiko Epson Corporation
InventorsKazushige Umetsu, Yohei Kurashima, Jun Amako
Life of this patent
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Abstract
A conductive material is provided to an open end of a penetrating hole penetrating through at least a semiconductor element, on the side of a first surface of the semiconductor element. The conductive material is melted to flow into the penetrating hole. The conductive material is made to flow into the penetrating hole in a state that an atmospheric pressure on the side of a second surface of the semiconductor element opposite to the first surface is lower than an atmospheric pressure on the side of the first surface.
Claims1
A semiconductor device comprising:
- a semiconductor element having a pad and a penetrating hole penetrating through the pad and the semiconductor element;
- and
- a conductive material that is provided in an area including a space inside an inner surface of the penetrating hole and is electrically connected to the pad, wherein part of the conductive material forms a bump protruding from a surface of the semiconductor element opposite to a surface having the pad,
- wherein the penetrating hole is surrounded by an insulating material formed on an inner surface of a hole in the semiconductor element;
- and
- wherein the diameter of the bump is smaller than the diameter of the hole.
3 more elements
Dependencies are inferred from the claim text.