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US 6,812,495 B2Granted
Ge photodetectors
AssigneeMassachusetts Institute of Technology
InventorsKazumi Wada, Lionel C. Kimerling, Yasuhiko Ishikawa, Douglas D. Cannon, Jifeng Liu
Life of this patent
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Abstract
A photodetector device includes a plurality of Ge epilayers that are grown on a substrate and annealed in a defined temperature range. The Ge epilayers form a tensile strained Ge layer that allows the photodetector device to operate efficiently in the C-band and L-band.
Claims13
A photodetector device comprising:
- a substrate;
- and
- a plurality of Ge epilayers that are grown on said substrate and annealed in a defined temperature range, said Ge epilayers forming a tensile strained Ge layer that allows said photodetector device to operate efficiently in the C-band and L-band.
A photodetector device comprising:
- a substrate;
- and
- a plurality of SiGe epilayers that are grown on said substrate at a high temperature so as to form a SiGe structure, said SiGe epilayers forming a tensile strained SiGe layer by cooling to room temperature the SiGe structure using bi-metal effect, said tensile strained SiGe layer allowing said photodetector device to operate efficiently in the C-band and L-band.
Dependencies are inferred from the claim text.