Pre-cleaning for silicidation in an SMOS process
AssigneeAdvanced Micro Devices, Inc.
InventorsEric N. Paton, Paul R. Besser, Qi Xiang
Life of this patent
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Abstract
A fabrication system utilizes a protocol for removing native oxide from a top surface of a wafer. An exposure to a plasma, such as a plasma containing hydrogen and argon can remove the native oxide from the top surface without causing excessive germanium contamination. The protocol can use a hydrogen fluoride dip. The hydrogen fluoride dip can be used before the plasma is used. The protocol allows better silicidation in SMOS devices.
Claims20
A method of manufacturing an integrated circuit comprising:
- providing a substrate, the substrate including a layer including germanium;
- providing a gate structure above the substrate;
- pre-cleaning the substrate using hydrofluoric acid after the step of providing a gate structure;
- and
- pre-cleaning the substrate with an argon and hydrogen plasma after the step of pre-cleaning the substrate using hydrofluoric acid;
- and
- siliciding the substrate.
A method of pre-cleaning a top surface of an IC substrate before silicidation in a chamber, the method comprising:
- exposing the IC substrate to hydrofluoric acid to remove native oxide from the IC substrate;
- and
- providing a plasma including hydrogen in the chamber to remove native oxide from the IC substrate remaining after the exposure of the IC substrate to hydrofluoric acid.
A method of manufacturing a transistor on an integrated circuit, the method comprising:
- providing a gate structure on a top surface of a strained silicon layer or a silicon germanium layer;
- removing a native oxide material from the strained silicon layer or silicon germanium layer using a hydrofluoric acid wet bath;
- providing a plasma including hydrogen and argon to remove the native oxide material;
- and
- siliciding the top surface.
Dependencies are inferred from the claim text.