Multichip semiconductor device, chip therefor and method of formation thereof
AssigneeKabushiki Kaisha Toshiba
InventorsNobuo Hayasaka, Katsuya Okumura, Keiichi Sasaki, Mie Matsuo
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Abstract
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
Claims16
A multichip semiconductor device having a stack of chips each having a semiconductor substrate which has a surface on which circuit components are formed,
- wherein at least one chip of the chips has
- a first interlayer insulating film formed above the surface of the semiconductor substrate,
- a connect plug formed entirely in a through hole which passes through the semiconductor substrate and the first interlayer insulating film,
- a second interlayer insulating film formed on the first interlayer insulating film, and
- a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug, and
- the connect plug of the at least one chip is electrically connected to another chip of the chips through a bump with a predetermined space.
A chip for use in a multichip semiconductor device comprising:
- a semiconductor substrate having a surface on which circuit components are formed;
- a first interlayer insulating film formed above the surface of the semiconductor substrate;
- a connect plug made of a metal formed entirely in a through hole that passes through the first interlayer insulating film and the semiconductor substrate;
- a second interlayer insulating film formed on the first interlayer insulating film;
- a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug;
- and
- a bump for electrically connecting the connect plug to another chip with a predetermined space.
A multichip semiconductor device having a stack of chips each having a semiconductor substrate which has a surface on which circuit components are formed,
- wherein at least one chip of the chips has
- a first interlayer insulating film formed above the surface of the semiconductor substrate,
- a connect plug formed entirely in a through hole which passes through the semiconductor substrate and the first interlayer insulating film,
- a second interlayer insulating film formed on the first interlayer insulating file, and
- a metal interconnection which passes through the second interlayer insulating film and which connects to a portion of the connect plug, an area of the portion being smaller than a cross-sectional area of the connect plug, and
- the connect plug of the at least one chip is connected to another chip of the chips through a bump with a predetermined space.
Dependencies are inferred from the claim text.