Method and apparatus for virtually partitioning an integrated multilevel nonvolatile memory circuit
AssigneeSilicon Storage Technology, Inc.
InventorJack E. Frayer
Life of this patent
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Abstract
An integrated multilevel nonvolatile flash memory device has a memory array of a plurality of memory units arranged in a plurality of rows and columns. Each of the memory units has a plurality of memory cells with each memory cell for storing a multibit state. Each of the memory units stores encoded user data and overhead data. The partitioning of the encoded user data and the overhead data stored in a single memory unit may be done virtually. The result is a compact memory unit without the need for an index to overhead data for its associated user data.
Claims11
An integrated multilevel non-volatile memory circuit comprising:
- a plurality of memory units arranged in an array comprising a plurality of rows and columns;
- and
- each of said memory units having a plurality of memory cells, with each cell storing a plurality (greater than 2) of states;
- wherein each of said memory units stores encoded user data and overhead data that are virtually partitioned.
A method of storing user data and overhead data in a non-volatile memory circuit, said method comprising:
- partitioning an array of semiconductor memory cells into a plurality of memory units with each memory unit having a plurality of memory cells;
- and
- storing a plurality (greater than 2) of states in each memory cell of each memory unit;
- wherein each memory unit stores encoded user data and overhead data that are virtually partitioned.
Dependencies are inferred from the claim text.