US 6,807,213 B1Granted

Semiconductor optical device apparatus

AssigneeMitsubishi Chemical Corporation

InventorsKenji Shimoyama, Nobuyuki Hosoi, Kazumasa Kiyomi, Yoshihito Sato, Satosi Kikuchi

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Abstract

This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (WC) at an opening center of the stripe-shaped opening is different from either or both of a width (WF) of the opening front end and a width (WR) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

Claims53

Dependent claims

A semiconductor optical device apparatus comprising:

a substrate;
a compound semiconductor layer containing an active layer;
a dielectric protection film having a stripe-shaped opening formed on the compound semiconductor layer;
and
a ridge type compound semiconductor layer having a smaller refractive index than the refractive index of the active layer, the ridge type compound semiconductor layer being formed as to cover the stripe-shaped opening,
wherein the compound semiconductor layer, the dielectric protection film, and the ridge type compound semiconductor layer are formed on the substrate, and wherein the semiconductor optical device apparatus satisfies either or both of the following conditions (a) and (b):
condition (a):
a width (WC) at an opening center of the stripe-shaped opening is different from a width (WF) of the opening front end;
and
condition (b):
a width (WC) at an opening center of the stripe-shaped opening is different from a width (WR) of the opening rear end.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/511,188Filed 23 Feb 2000
Priority: JP 11-04506723 Feb 1999
Granted: 19 Oct 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H01S 5/2231
Buried stripe structure: with inner confining structure only between the active layer and the upper electrode
H01S 5/1014
Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids: tapered waveguide, e.g. spotsize converter
H01S 5/1064
Comprising an active region having a varying composition or cross-section in a specific direction: varying width along the optical axis
H01S 5/50
Semiconductor lasers: amplifier structures not provided for in groups H01S5/02 - H01S5/30