Semiconductor laser device
AssigneeSharp Kabushiki Kaisha
InventorTakehiro Shiomoto
Life of this patent
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Abstract
A semiconductor laser device has a stem having a mounting surface, a first semiconductor laser element directly or indirectly mounted onto the mounting surface of the stem, the first semiconductor laser element having an emission wavelength and a temperature dependence, and a second semiconductor laser element disposed on top of the first semiconductor laser element, the second semiconductor laser element having an emission wavelength different from the emission wavelength of the first semiconductor laser element and a temperature dependence lower than the temperature dependence of the first semiconductor laser element.
Claims14
A semiconductor laser device comprising:
- a stem having a mounting surface;
- a first semiconductor laser element mounted on the mounting surface of said stem, said first semiconductor laser element having an emission wavelength and a temperature dependence;
- and
- a second semiconductor laser element disposed on top of said first semiconductor laser element, said second semiconductor laser element having an emission wavelength different from the emission wavelength of said first semiconductor laser element and a temperature dependence lower than the temperature dependence of said first semiconductor laser element.
A semiconductor laser device comprising:
- a stem having a mounting surface;
- and
- a plurality of semiconductor laser elements disposed one on top of another and over the mounting surface of the stem so as to be supported by the stem, said plurality of semiconductor laser elements having different emission wavelengths and different temperature dependencies;
- wherein said plurality of semiconductor laser elements are stacked in order of temperature dependence such that the laser chip farther from the mounting surface of the stem has a lower temperature dependence than the laser chip closer to the mounting surface of the stem.
A semiconductor laser device comprising:
- a first semiconductor laser element supported by a mount, said first semiconductor laser element having an emission wavelength and a temperature dependence;
- and
- a second semiconductor laser element disposed at least partially over said first semiconductor laser element, said second semiconductor laser element having an emission wavelength higher than the emission wavelength of said first semiconductor laser element and a temperature dependence lower than the temperature dependence of said first semiconductor laser element so that power of the second semiconductor laser element is less affected by a given change in temperature than power of the first semiconductor laser element which is closer to the mount.
A semiconductor laser device comprising:
- a stem including a mounting surface;
- a first semiconductor laser element mounted on the mounting surface of said stem, said first semiconductor laser element having an emission wavelength in a range of 640-660 nm;
- and
- a second semiconductor laser element disposed on top of said first semiconductor laser element and having an emission wavelength in a range of 770-800 nm.
Dependencies are inferred from the claim text.