Semiconductor memory device and electronic information device using the same
AssigneeSharp Kabushiki Kaisha
InventorHiroshi Kiso
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Abstract
In a semiconductor memory device for performing a memory operation by controlling an internal voltage and a memory operation voltage, a cycle of an internal clock signal is varied in accordance with operation time characteristics of the memory operation.
Claims20
A semiconductor memory device for performing a memory operation by controlling an internal voltage and a memory operation voltage, wherein a cycle of an internal clock signal is varied in accordance with operation time characteristics of the memory operation.
A semiconductor memory device for performing a memory operation such as data write to or data erase from a memory cell by sequentially controlling raising of an internal voltage to a prescribed voltage, application of a memory operation voltage for writing data to or erasing data from the memory cell, and dropping of the raised internal voltage to a prescribed voltage, wherein a cycle of an internal clock signal is varied in accordance with an operation time characteristic of the memory operation.
Dependencies are inferred from the claim text.