Voltage and temperature compensated pulse generator

A pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises:

• an upper resistive component coupled between a first potential node and an output node of the threshold signal generator and having a positive effective temperature coefficient of resistivity;
• a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter coupled to a second potential node through at least one resistive element;
• at least one resistive element coupled in parallel with the bipolar junction transistor, each having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor;
• and
• at least one resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node.

A flash memory device, comprising:

• a memory array of floating-gate memory cells;
• a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises:
• an upper resistive component coupled between a first potential node and an output node of the threshold signal generator;
• a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter coupled to a second potential node through at least one resistive element;
• and
• at least one resistive element coupled in parallel with the bipolar junction transistor, each having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor.

A flash memory device, comprising:

• a memory array of floating-gate memory cells;
• a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises:
• an upper resistive component coupled between a first potential node and an output node of the threshold signal generator and having a positive effective temperature coefficient of resistivity;
• a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter coupled to a second potential node through at least one resistive element;
• at least one resistive element coupled in parallel with the bipolar junction transistor, each having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor;
• and
• at least one resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node.