Structure and method for transverse field enhancement

A magnetic structure having an active area and an inactive area, comprising:

• a substrate having an active area and an inactive area;
• a memory cell structure formed over the active area of the substrate;
• a nonconductive layer formed surrounding the memory cell structure;
• and
• a conductive line adjacent the magnetic memory cell structure to conduct a current to generate a magnetic field to partially select the magnetic memory cell structure, the conductive line having a first width over the inactive area and a second width over the active area, the magnitude of the second width less than the magnitude of the first width.

A computer system, comprising:

• a processor;
• a memory system that comprises a plurality of memory modules, one of the plurality of the memory modules comprises a plurality of memory devices;
• a plurality of command links coupled to the plurality of memory devices to communicate at least one command signal;
• a plurality of data links coupled to the plurality of memory devices to communicate data;
• a memory controller;
• at least one user interface device, wherein the at least one user interface device includes a monitor;
• at least one output device, wherein the at least one output device includes a printer;
• at least one bulk storage device, wherein at least one memory device of the plurality of memory devices is a magnetic structure, which comprises:
• a magnetic memory cell structure having a top and a bottom;
• and
• a first conductive means for increasing the flux density to unambiguously select the magnetic memory cell structure for reading and writing of information.

A magnetic memory device, comprising:

• a memory array having a plurality of magnetic memory cells arranged in rows and columns, each of the magnetic memory cells having
• a memory cell having a ferromagnetic nature to change between first and second states when subject to application of a magnetic field having a magnitude greater than a threshold value;
• and
• a current path through which a current conducts, the current path having a first portion and a second portion to provide a magnetic field that couples the memory cell, the first portion of the current path providing a first magnetic field and the second portion of the current path providing a second magnetic field, the sum magnitude of the first and second magnetic fields exceeding the threshold value.

A magnetic memory device, comprising:

• a memory array having a plurality of magnetic memory cells arranged in rows and columns, each of the magnetic memory cells having
• a magnetic memory cell having a ferromagnetic nature to change between first and second states when subject to application of a magnetic field having a magnitude greater than a threshold value;
• and
• a current path through which a current conducts to create a magnetic field coupling the magnetic memory cell, the current path having a first portion and a second portion, the first portion of the current path located adjacent to the magnetic memory cell and having a first cross-sectional area that is less than a second cross-sectional area of the second portion of the current path.