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US 6,807,092 B1Granted
MRAM cell having frustrated magnetic reservoirs
AssigneeInfineon Technologies AG
InventorDaniel Braun
Life of this patent
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Abstract
A magnetoresistive random access memory (MRAM) cell, comprising a magnetic tunnel junction having frustrated magnetic reservoirs disposed oppositely along two edges of a free magnetic layer of the junction and magnetized in the same direction that is substantially orthogonal to a free magnetic layer.
Claims34
A magnetoresistive random access memory (MRAM) cell, comprising:
- a magnetic tunnel junction having a first magnetic layer and a second magnetic layer separated by a non-magnetic layer that are formed on a substrate;
- and
- one or more frustrated magnetic reservoirs disposed oppositely along two edges of the first magnetic layer, said reservoirs magnetized in the same direction and substantially orthogonally to the first magnetic layer.
A method of fabricating a magnetoresistive random access memory (MRAM) device, comprising:
- forming a cross-point array of MRAM cells disposed at intersections of bit and word lines of the MRAM device, each MRAM cell comprising:
- a magnetic tunnel junction having a first magnetic layer and a second magnetic layer separated by a non-magnetic layer that are formed on a substrate;
- and one or more frustrated magnetic reservoirs disposed oppositely along two edges of the first magnetic layer;
- and
- magnetizing said reservoirs in the same direction and substantially orthogonally to the first magnetic layer.
2 more elements
Dependencies are inferred from the claim text.