Method of making hybrid semiconductor—magnetic spin based memory

A method of forming a hybrid magnetoelectronic spin-based memory cell including the steps of:

• forming an electron spin-based memory element situated on a silicon based substrate;
• said electron spin-based memory element including:
• i) a first ferromagnetic layer with a first changeable magnetization state comprising permalloy and/or cobalt;
• ii) a second ferromagnetic layer with a second non-changeable magnetization state also comprising permalloy and/or cobalt;
• iii) a conductive paramagnetic base layer which is less than 1 micron in thickness and is situated between said first ferromagnetic layer and said second ferromagnetic layer, said base layer comprising a paramagnetic material capable of conducting a spin polarized current;
• forming a memory cell selector coupled to said electron spin-based memory, said memory cell selector including a semiconductor based isolation element.

A method of forming a hybrid magnetoelectronic spin-based memory cell including the steps of:

• forming an electron spin-based memory element situated on a silicon based substrate, said electron spin-based memory element including:
• i) a first ferromagnetic layer with a changeable magnetization state;
• ii) a second ferromagnetic layer with a non-changeable magnetization state;
• iii) a base layer which is less than 1 micron in thickness and is situated between said first ferromagnetic layer and said second ferromagnetic layer, said base layer comprising a conductive paramagnetic material capable of carrying a spin polarized current;
• iv) a low transmission barrier also situated between said first ferromagnetic layer and said second ferromagnetic layer;
• forming a semiconductor based isolation element coupled to said electron spin-based memory.

A method of forming a hybrid magnetoelectronic spin-based memory cell including the steps of:

• forming an electron spin-based memory element situated on a silicon based substrate;
• said electron spin-based memory element including:
• i) a first ferromagnetic layer with a changeable magnetization state comprising permalloy and/or cobalt;
• ii) a second ferromagnetic layer with a non-changeable magnetization state also comprising permalloy and/or cobalt;
• iii) a base layer which is less than 1 micron in thickness and is situated between said first ferromagnetic layer and said second ferromagnetic layer, said base layer being capable of carrying a spin polarized current;
• iv) a low transmission barrier interface between said base layer and said first ferromagnetic layer, said low transmission barrier interface being configured to effectuate a unipolar voltage output for the hybrid magnetoelectronic spin-based memory cell;
• forming a semiconductor based isolation element coupled to said electron spin-based memory element.

A method of making a hybrid magnetoelectronic spin-based memory cell on a silicon based substrate comprising the steps of:

• i) fabricating a semiconductor transistor in the silicon based substrate, which semiconductor transistor functions to isolate the hybrid magnetoelectronic spin-based memory cell from other devices in an array of hybrid magnetoelectronic spin-based memory cells;
• ii) fabricating a first ferromagnetic layer with a first coercivity over the semiconductor transistor;
• iii) fabricating an aluminum base layer on said first ferromagnetic layer;
• iv) fabricating a second ferromagnetic layer with a second coercivity that is smaller than said first coercivity;
• wherein step (ii) includes a step of introducing a low transmission barrier at an interface that is situated between said aluminum base layer and said second ferromagnetic layer;
• wherein an impedance of the hybrid magnetoelectronic spin-based memory cell to a spin polarized current can be varied to store data.