Write current shunting compensation
AssigneeMicron Technology, Inc.
InventorJames G. Deak
Life of this patent
Estimating the term…
Abstract
A magnetic random access memory (MRAM) is compensated for write current shunting by varying the bit size of each MRAM cell with position along the write line. The MRAM includes a plurality of magnetic tunnel junction memory cells arranged in an array of columns and rows. The width of each memory cell increases along a write line to compensate for write current shunting.
Claims19
A magnetic random access memory (MRAM) array comprising:
- a write line;
- and
- a plurality of MRAM cells positioned along the write line, a physical size of each MRAM cell varying respectively with position along the write line.
A magnetic random access memory (MRAM) device comprising:
- a write line;
- a potential source applied to a beginning of the write line;
- and
- a plurality of magnetic tunnel junction cells positioned along the write line, a width of each respective cell increasing progressively from the beginning of the write line to an end of the write line.
A random access storage device comprising:
- a substrate;
- and
- a plurality of MRAM cells disposed on the substrate in an array provided with read lines and write lines, each of the plurality of MRAM cells being configured and positioned along a respective write line according to each cell's write current requirements to compensate for write current shunting.
A microprocessor system comprising:
- a microprocessor;
- and
- a random access memory device including a plurality of MRAM cells compensated for write current shunting by configuring and positioning each of the plurality of MRAM cells along a respective write line according to each cell's write current requirements.
A method of fabricating a magnetic memory device, the method comprising forming a plurality of magnetic memory cells in an array and configuring a physical size of each memory cell based upon cell position along a write line so as to compensate for write current shunting.
A method of manufacturing a magnetic memory array, the method comprising the steps of forming magnetic memory cells on a substrate in a row and column arrangement, a physical size dimension of each respective memory cell in a column increasing from a high potential side of the column to a low potential side of the column.
Dependencies are inferred from the claim text.