Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
Life of this patent
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Abstract
MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.
Claims67
A magnetic random access memory comprising:
- first and second MTJ elements each configured with a first magnetic layer in which the orientation of a spin is pinned, a second magnetic layer in which data is stored, and an insulation layer sandwiched between the first and second magnetic layers;
- and
- a first write line which is arranged between the first and second MTJ elements and generates magnetic fields acting on the first and second MTJ elements,
- wherein a positional relationship between the first magnetic layer, the insulation layer, and the second magnetic layer constructing the first MTJ element and the first magnetic layer, the insulation layer, and the second magnetic layer constructing the second MTJ element is symmetric to the first write line.
A magnetic random access memory comprising:
- first, second, and third MTJ elements each configured with a first magnetic layer in which the orientation of a spin is pinned, a second magnetic layer in which data is stored, and an insulation layer sandwiched between the first and second magnetic layers;
- a first write line which is arranged between the first and second MTJ elements and generates magnetic fields acting on the first and second MTJ elements;
- and
- a second write line which is arranged between the second and third MTJ elements and generates magnetic fields acting on the second and third MTJ elements,
- wherein a positional relationship between the first magnetic layer, the insulation layer, and the second magnetic layer constructing the first MTJ element and the first magnetic layer, the insulation layer, and the second magnetic layer constructing the second MTJ element is symmetric to the first write line, and
- a positional relationship between the first magnetic layer, the insulation layer, and the second magnetic layer constructing the second MTJ element and the first magnetic layer, the insulation layer, and the second magnetic layer constructing the third MTJ element is symmetric to the second write line.
A magnetic random access memory comprising:
- an array having a plurality of MTJ elements accumulated in a plurality of portions;
- a first conductive line arranged in the array;
- a second conductive line arranged in the array which has the same function as the first conductive line and is arranged above the first conductive line;
- and
- first contact plugs connecting the first and second conductive lines in serial.
A magnetic random access memory comprising:
- an array having a plurality of MTJ elements accumulated in a plurality of portions;
- a first conductive line arranged in the array;
- a second conductive line arranged in the array which has the same function as the first conductive line and is arranged above the first conductive line;
- and
- first contact plugs connecting the first and second conductive lines in parallel.
A magnetic random access memory comprising:
- an array having a plurality of MTJ elements accumulated in a plurality of portions;
- and
- a first write line which extends in the direction in which the plurality of MTJ elements are accumulated and is provided for generating a magnetic field during writing.
A magnetic random access memory comprising:
- an array having a plurality of MTJ elements accumulated in a plurality of portions;
- and
- a first read line which extends in the direction in which the plurality of MTJ elements are accumulated and is provided for flowing a read current during reading.
Dependencies are inferred from the claim text.