Semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorYasuhiro Matsushima
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Abstract
A semiconductor device has a plurality of gate bus wirings and source bus wirings on one of paired substrates. Moreover, an inter-layer insulating film made of an organic material is provided on thin film transistors of respective picture elements, and a picture element electrode is provided on the inter-layer insulating film. Furthermore, the semiconductor device is provided with an additional capacity common wiring which is provided on the inter-layer insulating film and forms an additional capacity section between the picture element electrode and the additional capacity common wiring.
Claims16
A semiconductor device comprising:
- a plurality of scanning lines;
- a plurality of signal lines arranged to cross said scanning lines;
- a switching element provided at an intersection of one of said scanning lines and one of said signal lines;
- an inter-layer insulating film made of an organic material formed above said scanning lines, said signal lines and said switching element;
- a picture element electrode formed above said inter-layer insulating film;
- and
- an additional capacity common wiring for holding a video signal, an additional capacity section being formed between said picture element electrode and said additional capacity common wiring, said additional capacity common wiring being formed above said inter-layer insulating film.
A semiconductor device comprising:
- a scanning line;
- a signal line crossing the scanning line;
- a switching element provided at an intersection of the scanning line and the signal lines;
- an inter-layer insulating film comprising an organic material formed above the scanning line, the signal line and the switching element;
- a picture element electrode formed above the inter-layer insulating film;
- and
- an additional capacity electrode formed above the inter-layer insulating film,
- wherein the picture element electrode and the additional capacity electrode comprise part of an additional capacity section.
Dependencies are inferred from the claim text.