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US 6,806,918 B2Granted
Active matrix substrate and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorMasahiko Akiyama
Life of this patent
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Abstract
A method of manufacturing an active matrix substrate comprises forming a plurality of elements on an element formation substrate, forming wirings on a final substrate, transferring some elements selected from the elements, and selectively connecting some elements to the wirings on the final substrate. According to this method, it is possible to manufacture an active matrix substrate providing a high definition image on a large substrate or a non-glass substrate, at a low cost.
Claims21
An active matrix substrate comprising:
- a substrate;
- a plurality of adhesion thick film pads formed on said substrate;
- an etching stopper layer formed on each of said adhesion thick film pads;
- an undercoat layer made of a material selected from the group consisting of silicon nitride and silicon oxide, and formed an said etching stopper layer;
- a plurality of elements each formed on said undercoat layer;
- wherein stacked layers each comprising one of said adhesion thick film pads, said etching stopper layer, and said undercoat layer are separated such that said stacked layers are disposed only just under said plurality of elements, respectively.
3 more elements
An active matrix substrate comprising:
- a substrate;
- an adhesion thick film pad formed on said substrate;
- an etching stopper layer formed on said adhesion thick film pad and formed of a member that is resistant to hydrofluoric acid;
- an insulative undercoat layer formed on said etching stopper layer;
- and
- an active element formed on said undercoat layer.
3 more elements
Dependencies are inferred from the claim text.