Magnetic detecting element having β-values selected for free magnetic layer and pinned magnetic layer
AssigneeAlps Electronics Co., Ltd.
InventorsMasamichi Saito, Yosuke Ide, Naoya Hasegawa
Life of this patent
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Abstract
The present invention provides a spin valve magnetic detecting element having large ΔR. The positive or negative sign of the β value of a magnetic material constituting each of a first free magnetic sub-layer, a second free magnetic sub-layer and a pinned magnetic layer is defined so that the resistance values for spin-up conduction electrons are smaller than the resistance values for spin-down conduction electrons in all magnetic layers when magnetization of a free magnetic layer is changed to minimize the resistance value. In this case, the change ΔR in resistance of the magnetic detecting element can be increased.
Claims27
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the free magnetic layer including a first free magnetic sub-layer and a second free magnetic sub-layer laminated on the first free magnetic sub-layer with a nonmagnetic intermediate layer provided therebetween,
- wherein one of:
- a β value of a magnetic material constituting the first free magnetic sub-layer has a positive or negative sign which is the same as that of the pinned magnetic layer and different from that of the second free magnetic sub-layer, and
- a β value of a magnetic material constituting the second free magnetic sub-layer has a positive or negative sign which is the same as that of the pinned magnetic layer, and different from that of the first free magnetic sub-layer, and
- wherein the β value is inherent to a magnetic material satisfying the relational expression, ρ↓/ρ↑=(1+β)/(1−β) wherein ρ↓ is a resistivity value for minority conduction electrons, and ρ↑ is a resistivity value for majority conduction electrons).
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the pinned magnetic layer including a first pinned magnetic sub-layer and a second pinned magnetic sub-layer laminated on the first pinned magnetic sub-layer with a nonmagnetic intermediate layer provided therebetween,
- wherein one of:
- a β value of a magnetic material constituting the second pinned magnetic sub-layer has a positive or negative sign which is the same as that of the free magnetic layer and different from that of the first pinned magnetic sub-layer, and
- a β value of a magnetic material constituting the first pinned magnetic sub-layer has a positive or negative sign which is the same as that of the free magnetic layer, and different from that of the second pinned magnetic sub-layer, and
- wherein the β value is inherent to a magnetic material satisfying the relational expression, ρ↓/ρ↑=(1+β)/(1−β) (wherein ρ↓ is a resistivity value for minority conduction electrons, and ρ↑ is a resistivity value for majority conduction electrons).
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the free magnetic layer including a first free magnetic sub-layer, a nonmagnetic intermediate layer, a second free magnetic sub-layer, a nonmagnetic intermediate layer and a third free magnetic sub-layer, which are laminated in that order,
- wherein one of:
- a β value of a magnetic material constituting the first free magnetic sub-layer has a positive or negative sign which is the same as those of the third free magnetic sub-layer and the pinned magnetic layer and different from that of the second free magnetic sub-layer, and
- a β value of a magnetic material constituting the second free magnetic sub-layer has a positive or negative sign which is the same as that of the pinned magnetic layer and different from those of the first free magnetic sub-layer and the third free magnetic sub-layer, and
- wherein the β value is inherent to a magnetic material satisfying the relational expression, ρ↓/ρ↑=(1+β)/(1−β) (wherein ρ↓ is a resistivity value for minority conduction electrons, and γ↑ is a resistivity value for majority conduction electrons).
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the free magnetic layer including a first free magnetic sub-layer and a second free pinned magnetic layer laminated on the first free magnetic sub-layer with a nonmagnetic intermediate layer provided therebetween,
- wherein assuming that an alloy belonging to an A group is one of a NiX alloy (wherein X is an element selected from Ca, Fe, Mn, Zr, Hf, Cu and Au), a CoT alloy (wherein T is an element selected from Fe, Zr, Ta and Hf,), an FeZ alloy (wherein Z is an element selected from Ni, Ca, Rh, Pt, Ir, Be, Al, Si, Ga and Ge), and a Co—Mn-D alloy (wherein D is an element selected from Al, Ga, Si, Ge and Sn), and an alloy belonging to a B group is one of a NiM alloy (wherein M is an element selected from Cr, Rh, Ru, Mo, Nb, Pt, Ir, Os, Re, W and Ta), a CoQ alloy (wherein Q is an element selected from Mn, Cr, Ru, Mo, Ir, Os, Re and W), and an FaA alloy (wherein A is an element selected from Mn, Cr, V, Ti, Ru, Mo, Os, Re and W), one of:
- a magnetic material constituting the first free magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as that of the pinned magnetic layer and different from that of the second free magnetic sub-layer, and a magnetic material constituting the second free magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as that of the pinned magnetic layer and different from that of the first free magnetic sub-layer.
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the pinned magnetic layer including a first pinned magnetic sub-layer, and a second pinned magnetic sub-layer laminated on the first pinned magnetic sub-layer with a nonmagnetic intermediate layer provided therebetween,
- wherein assuming that an alloy belonging to an A group is one of a NiX alloy (wherein X is an element selected from Ca, Fe, Mn, Zr, Hf, Cu and Au), a CoT alloy (wherein T is an element selected from Fe, Zr, Ta and Hf,), an FeZ alloy (wherein Z is an element selected from Ni, Co, Rh, Pt, Ir, Be, Al, Si, Ga and Ge), and a Co-Mn-D alloy (wherein D is an element selected from Al, Ga, Si, Ge and Sn), and an alloy belonging to a B group is one of a NiM alloy (wherein M is an element selected from Cr, Rh, Ru, Mo, Nb, Pt, Ir, Os, Re, W and Ta), a CoQ alloy (wherein Q is an element selected from Mn, Cr, Ru, Mo, Ir, Os, Re and W), and an FeA alloy (wherein A is an element selected from Mn, Cr, V, Ti, Ru, Mo, Os, Re and W), one of a magnetic material constituting the second pinned magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as that of the free magnetic layer and different from that of the first pinned magnetic sub-layer, and a magnetic material constituting the first pinned magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as that of the free magnetic layer and different from that of the second pinned magnetic sub-layer.
A magnetic detecting element comprising:
- a multilayer film comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic material layer and a free magnetic layer, which are laminated in that order, the free magnetic layer including a first free magnetic sub-layer, a nonmagnetic intermediate layer, a second free magnetic sub-layer, a nonmagnetic intermediate layer and a third free magnetic sub-layer, which are laminated in that order,
- wherein assuming that an alloy belonging to a A group is one of a NiX alloy (wherein X is an element selected from Co, Fe, Mn, Zr, Hf, Cu and Au), a CoT alloy (wherein T is an element selected from Fe, Zr, Ta and Hf,), an FeZ alloy (wherein Z is an element selected from Ni, Co, Rh, Pt, Ir, Be, Al, Si, Ga and Ge), and a Co—Mn-D alloy (wherein D is an element selected from Al, Ga, Si, Ge and Sn), and an alloy belonging to a B group is one of a NiM alloy (wherein M is an element selected from Cr, Rh, Ru, Mo, Nb, Pt, Ir, Os, Re, W and Ta), a CoQ alloy (wherein Q is an element selected from Mn, Cr, Ru, Mo, Ir, Os, Re and W), and an FeA alloy (wherein A is an element selected from Mn, Cr, V, Ti, Ru, Mo, Os, Re and W), one of:
- a magnetic material constituting the first free magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as those of the third free magnetic sub-layer and the pinned magnetic layer and different from that of the second free magnetic sub-layer, and a magnetic material constituting the first free magnetic sub-layer comprises an alloy belonging to the A or B group which is the same as that of the third free magnetic sub-layer and different from those of the second pinned magnetic sub-layer and the pinned magnetic layer.
Dependencies are inferred from the claim text.