Ultra wide band low noise amplifier and method

An amplifier comprising:

• a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element;
• and
• a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode,
• wherein the CG amplifying elements, the CS amplifying element, and LT network comprise a second stage of the amplifier, the amplifier further comprising a first common-sate stage to provide an RF input signal to the cascode, the first stage comprising a first stage CG amplifying element, and
• wherein the amplifier further comprises a first stage inductive element and a first stage resistive element coupled to a drain of the first stage CG amplifying element selected at least in part to compensate for a capacitive input impedance of the cascode and to provide a substantially matched input to the amplifier over an ultra wide frequency band.

An amplifier comprising:

• a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element;
• and
• a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode,
• wherein the LT network is comprises a parallel combination of an LT capacitive element, an LT inductive element, and an LT resistive element, wherein:
• the CS and CG amplifying elements comprise CMOS FETs having a width to length (W/L) ranging between approximately 45-50/0.09 (μm/μm);
• the LT inductive element has an inductance significantly greater than a parasitic inductance of a drain of the CG amplifying element;
• the LT inductive element has a value ranging from approximately 3 to 10 nH, the LT capacitive element has a value ranging from approximately 0.5 to 1.5 pF, and the LT resistive element has a value ranging from approximately 30 and 150 Ohms;
• and
• the LT inductive element, the LT capacitive element and the LT resistive element form a resonant circuit within the ultra wide frequency band.

An ultra wide band low noise amplifier (UWB LNA) comprising:

• a first stage comprising a first stage common-gate (CG) amplifying element;
• a second stage comprising CG amplifying element in a cascode with a common-source (CS) amplifying element, and a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode, the first stage to transform an input impedance to the second stage;
• and
• a plurality of third stage resistor-based CS amplifying elements to provide RF signals to a plurality of down converting elements for generation of a plurality of signals corresponding with portions of an ultra wide band frequency band.

An ultra wide band low noise amplifier (UWB LNA) comprising:

• a first stage comprising a first stage common-gate (CG) amplifying element;
• a second stage comprising CG amplifying element in a cascode with a common-source (CS) amplifying element, and a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode, the first stage to transform an input impedance to the second stage;
• and
• a first stage inductive element and a first stage resistive element coupled to a drain of the first stage CG amplifying element, the first stage inductive and resistive elements selected to, at least in part, compensate for a capacitive input impedance of the cascode and provide a substantially matched antenna input to the amplifier over the ultra wide frequency band.

A method of amplifying an RF signal in an ultra wide frequency band comprising:

• transforming an antenna input impedance to a capacitive input impedance of a cascode with an input-matching common-gate (CG) amplifying element and a drain-inductive element to produce a substantially matched input impedance to the cascode over the ultra wide frequency band, the cascode comprising a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element;
• amplifying the RF signal with the cascode;
• and
• tracking, at least in part, a changing output impedance of the cascode for frequencies in the ultra wide frequency band, wherein tracking comprises tracking with a load tracking (LT) network having component values selected to track, at least in part, the changing output impedance over the ultra wide frequency band.

A method of amplifying an RF signal in an ultra wide frequency band comprising:

• transforming an antenna input impedance to a capacitive input impedance of a cascode, the cascode comprising a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element;
• amplifying the RF signal with the cascode;
• and
• tracking, at least in part, a changing output impedance of the cascode for frequencies in the ultra wide frequency band,
• wherein tracking comprises tracking the changing output impedance, at least in part, with a load tracking (LT) network, the LT network comprising a parallel combination of an LT capacitive element, an LT inductive element, and an LT resistive element, and wherein values of the LT capacitive element, the LT inductive element and the LT resistive element are selected to, at least in part, track the changing output impedance of the cascode over the ultra wide frequency band to broaden an output response of the cascode in the frequency band, and
• wherein transforming comprises transforming the antenna input with a first common-gate stage of an amplifier to provide an RF input signal to the cascode, the first stage comprising of a first stage CG amplifying element, a first stage inductive element and a first stage resistive element, the first stage inductive and resistive elements coupled to a drain of the first stage CG amplifying element and selected to, at least in part, compensate for a capacitive input impedance of the cascode and to provide a substantially matched antenna input over the ultra wide frequency band.

A receiver system comprising:

• a dipole antenna to receive an RF signal within an ultra wide band frequency band;
• a ultra wide band low noise amplifier (UWB LNA) to amplify the RF signal;
• and
• a plurality of down converting elements to generate signals corresponding with portions of the ultra wide frequency band,
• wherein the amplifier comprises a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element, and a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode to help provide substantially constant gain over the ultra wide frequency band.

A method of designing an ultra wide band low noise amplifier comprising:

• measuring S-parameters of a semiconductor device;
• modeling a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element using the S-parameters;
• using the model to determine output impedances of the cascode to achieve a desired gain for selected frequencies of an ultra wide frequency band;
• and
• selecting elements of a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode,
• wherein modeling comprises generating constant gain circles for the selected frequencies of the frequency band, each constant gain circle defining changing output impedances of the cascode for the desired gain for one of the selected frequencies,
• wherein the LT network comprises a parallel combination of an LT capacitive element, an LT inductive element, and an LT resistive element,
• wherein selecting comprises:
• selecting initial values for the LT inductive element and LT capacitive element;
• measuring the output impedance of the cascade with the initial values of the LT inductive element and LT capacitive element;
• comparing the measured output impedance with the desired output impedances at the selected frequencies;
• and
• based on the comparison, further selecting values for the LT inductive element and LT capacitive element to reduce a difference between the measured LT network's output impedance and the desired output impedances at the selected frequencies,
• wherein the method further comprises selecting the LT resistive element to flatten an output response of the cascode over the frequency band.

A method of designing an ultra wide band low noise amplifier comprising:

• measuring S-parameters of a semiconductor device;
• modeling a common-gate (CG) amplifying element in a cascode with a common-source (CS) amplifying element using the S-parameters;
• using the model to determine output impedances of the cascode to achieve a desired gain for selected frequencies of an ultra wide frequency band;
• and
• selecting elements of a load-tracking (LT) network at an output of the CG amplifying element to, at least in part, track a changing output impedance of the cascode,
• wherein modeling comprises generating constant gain circles for the selected frequencies of the frequency band, each constant pain circle defining changing output impedances of the cascode for the desired gain for one of the selected frequencies,
• wherein the LT network comprises a parallel combination of an LT capacitive element, an LT inductive element, and an LT resistive element,
• wherein selecting comprises:
• selecting initial values for the LT inductive element and LT capacitive element;
• measuring the output impedance of the cascode with the initial values of the LT inductive element and LT capacitive element;
• comparing the measured output impedance with the desired output impedances at the selected frequencies;
• and
• based on the comparison, further selecting values for the LT inductive element and LT capacitive element to reduce a difference between the measured LT network's output impedance and the desired output impedances at the selected frequencies,
• wherein the method further comprises:
• adding a first common-gate stage to provide an RF input signal to the cascode, the first stage being a common-gate stage comprising a first stage CG amplifying element;
• and
• selecting a first stage inductive element and a first stage resistive element coupled to a drain of the first stage CG amplifying element, the first stage to, at least in part, compensate for a capacitive input impedance of the cascode and provide a substantially matched input to the amplifier over the ultra wide frequency band.

An amplifier comprising:

• a single transistor amplifying element;
• a load-tracking (LT) network at an output of the single transistor amplifying element to, at least in part, track a changing output impedance of the single transistor amplifying element, the LT network comprising a parallel combination of an LT capacitive element, an LT inductive element, and an LT resistive element;
• a first common-gate stage to provide an RF input signal to the single transistor amplifying element, the first stage comprising a first stage CG amplifying element,
• a first stage inductive element and a first stage resistive element coupled to a drain of the first stage CG amplifying element selected at least in part to compensate for a capacitive input impedance of the single transistor amplifying element and to provide a substantially matched input to the amplifier over the ultra wide frequency band;
• and
• at least one resistor-based amplifying stage after the single transistor amplifying element comprising a third stage CS amplifying element.