Method for determining a Weibull slope having a bias voltage variation adjustment

Abstract

According to one exemplary embodiment, a method for determining a Weibull slope at a specified bias voltage comprises a step of performing a number of groups of failure tests on a test structure to determine a number of groups of test data, where each of the groups of failure tests is performed at a respective one of a number of test bias voltages, and where each group of failure tests corresponds to a respective group of test data. The test structure may be an array of MOS transistors, for example. The method further comprises utilizing the number of groups of test data to determine a scaling line. According to this exemplary embodiment, the method further comprises utilizing the scaling line to determine the Weibull slope at the specified bias voltage. The method may further comprise utilizing the Weibull slope to determine a lifetime of a semiconductor die.

Dependencies are inferred from the claim text.