Structure and the method for measuring the spectral content of an electric field as a function of position inside a plasma
AssigneeTokyo Electron Limited
InventorsWayne L. Johnson, Thomas H. Windhorn
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AssigneeTokyo Electron Limited
InventorsWayne L. Johnson, Thomas H. Windhorn
Estimating the term…
An RF electric field probe device for measuring an RF electric field intensity in a plasma. The device is composed essentially of an electric field sensing unit and an output unit. The electric field sensing unit is composed of a first electro-optical component positionable in the plasma and operable to modulate light as a function of variations of the RF electric field in the plasma at the fundamental frequency and harmonics of the RF electric field, and a first antenna unit electrically coupled to the first component for coupling the first component to the RF electric field. The output unit is coupled to the electric field sensing unit for providing an output signal containing information relating to the magnitude and frequency of the modulation which occurs in the first component. The probe device may be used to map a plasma region by moving the probe device to any selected point in the plasma region.
An RF electric field probe device for measuring an RF electric field intensity in a plasma, said device comprising:
A method for mapping fundamental frequency and harmonic components of an RF electric field in a plasma, comprising the steps of:
Dependencies are inferred from the claim text.