Semiconductor device having multilevel interconnections and method of manufacturing the same

Abstract

In a semiconductor device capable of reducing an electromigration occurring in multilevel interconnections of a high-speed integrated circuit and a method of manufacturing the same, a contact stud is composed of a first portion penetrating an intermetal insulating film and a second portion protruding above the intermetal insulating film. The second portion has vertical sidewalls that are extended vertically with respect to the main surface of the semiconductor substrate and an upper surface that is extended parallel to the main surface. The vertical sidewalls and upper surface are entirely covered with the second metal interconnection layer. Also, in the method of fabricating a semiconductor device including multilevel interconnections, a hard mask pattern is formed on an intermetal insulating film. Then, a via hole is formed to penetrate the intermetal insulating film by etching a portion of the exposed intermetal insulating film. Next, a contact stud composed of a first portion filling the via hole and a second portion, which fills the upper hole and having vertical sidewalls that are extended vertically with respect to the main surface of the semiconductor substrate and an upper surface that is extended parallel to the main surface, is formed. Thereafter, the hard mask pattern is removed and then, a second metal interconnection layer covering the vertical sidewalls and upper surface of the second portion of the contact stud is formed.

Dependencies are inferred from the claim text.