Structure for contact formation using a silicon-germanium alloy
AssigneeMicron Technology, Inc.
InventorRandhir P. S. Thakur
Life of this patent
Estimating the term…
Abstract
A new method and structure for an improved contact using doped silicon is provided. The structures are integrated into several higher level embodiments. The improved contact has low contact resistivity. Improved junctions are thus provided between an IGFET device and subsequent metallization layers. The improvements are obtained through the use of a silicon-germanium (Si—Ge) alloy. The alloy can be formed from depositing germanium onto the substrate and subsequently annealing the contact or by selectively depositing the preformed alloy into a contact opening. The above advantages are incorporated with relatively few process steps.
Claims19
An information handling system comprising:
- a central processing unit;
- a random access memory;
- a system bus for communicatively coupling the central processing unit and the random access memory;
- and
- a conducting interface device comprising:
- a contact opening in a dielectric layer on a semiconductor substrate;
- an alloy material formed on the semiconductor substrate and within the contact opening in the dielectric layer;
- a continuous barrier metal formed over and adjoining walls of the contact opening and the alloy material;
- and
- a first contact material formed over the barrier metal.
A memory device, comprising:
- a number of access transistors, wherein a number of the access transistors include:
- a source/drain region formed in a semiconductor substrate;
- a conducting interface device coupled to the source/drain region, including:
- a contact opening in a dielectric layer over the source/drain region;
- an oxide layer on the dielectric layer, and within the contact opening in the dielectric layer;
- and
- an alloy material coupled to the source/drain region and coupled to the oxide layer within the contact opening.
A memory device, comprising:
- a number of access transistors, wherein a number of the access transistors include:
- a source/drain region;
- a contact opening in a dielectric layer located substantially over the source/drain region;
- an alloy material formed over the source/drain region and within the contact opening in the dielectric layer;
- a continuous barrier metal formed within the contact opening in the dielectric layer, formed over and adjoining walls of the contact opening and the alloy material;
- a first contact material formed over the barrier metal;
- and
- a second contact material formed over the first contact material.
An information handling system comprising:
- a central processing unit;
- a memory device;
- a system bus for communicatively coupling the central processing unit and the memory device;
- and
- a conducting interface device comprising:
- a contact opening in a dielectric layer on a semiconductor substrate;
- an alloy material formed on the semiconductor substrate and within the contact opening in the dielectric layer;
- a continuous barrier metal formed within the contact opening in the dielectric layer, formed over and adjoining walls of the contact opening and the alloy material;
- a first contact material formed over the barrier metal;
- and
- a second contact material formed over the first contact material.
Dependencies are inferred from the claim text.