Semiconductor component and method for fabricating it
AssigneeInfineon Technologies AG
InventorsJakob Huber, Wolfgang Klein
Life of this patent
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Abstract
A semiconductor component and a method for fabricating it includes a substrate and an epitaxial layer situated thereon and integrating at least a first and a second bipolar component in the layer. The first and second bipolar components have a buried layer and different collector widths. The buried layer of the second component has a larger layer thickness than that of the first component; exactly one epitaxial layer is provided. The different collector widths produced as a result thereof are influenced by the outdiffusion of the dopant of the buried layers by other substances.
Claims20
A semiconductor component, comprising:
- a substrate;
- only one epitaxial layer disposed on said substrate;
- at least a first bipolar component and a second bipolar component integrated in said epitaxial layer;
- said first bipolar component having:
- a first buried layer having:
- dopant in a first dopant concentration;
- and
- a first buried layer thickness;
- a substance influencing diffusion of said dopant in said first buried layer, said substance having a given concentration;
- and
- a first collector with a first collector width;
- said second bipolar component having:
- a second buried layer having:
- dopant in a second dopant concentration substantially identical to said first dopant concentration;
- a second buried layer thickness larger than said first buried layer thickness;
- and
- a substance influencing diffusion of dopant in said second buried layer, said substance having a concentration different from said given concentration;
- and
- a second collector with a second collector width different from said first collector width.
A semiconductor component, comprising:
- a substrate;
- only one epitaxial layer disposed on said substrate;
- at least a first and a second bipolar component integrated in said epitaxial layer;
- said first and second bipolar components having a buried layer and different collector widths;
- said buried layer of said first bipolar component having a substance influencing diffusion of said dopant in said buried layer of said first bipolar component;
- said buried layer of said second bipolar component having a larger layer thickness than said buried layer of said first bipolar component;
- said buried layer of said first bipolar component and said buried layer of said second bipolar component having dopant with identical dopant concentrations;
- and
- at least said buried layer of said second bipolar component having an additional substance influencing diffusion of said dopant in said buried layer, said additional substance having a given concentration;
- and
- said substance in said buried layer of said first bipolar component having a concentration different from said given concentration.
Dependencies are inferred from the claim text.