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US 6,806,554 B2Granted
Self-aligned SiGe HBT on a SOI substrate
AssigneeSharp Laboratories of America, Inc.
InventorSheng Teng Hsu
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Abstract
A SiGe HBT BiCMOS on a SOI substrate includes a self-aligned base/emitter junction to optimize the speed of the HBT device. The disclosed SiGe BiCMOS/SOI device has a higher performance than a SiGe BiCMOS device on a bulk substrate. The disclosed device and method of fabricating the same also retains the high performance of a SiGe HBT and the low power, high-speed properties of a SOI CMOS. In addition, the disclosed method of fabricating a self-aligned base/emitter junction provides a HBT transistor having an improved frequency response.
Claims9
A self-aligned SiGe HBT on a SOI substrate comprising:
- a silicon on insulator substrate;
- a base positioned on said silicon on insulator substrate, said base including an extrinsic base connected to a first polysilicon layer, and said first polysilicon layer being connected to an intrinsic base wherein said intrinsic base is manufactured by depositing a SiGe layer in a void positioned below a trench which is adapted to receive a second polysilicon layer therein so as to define an emitter;
- and
- an emitter positioned on said silicon on insulator substrate, said emitter positioned above and in contact with said intrinsic base.
1 more element
Dependencies are inferred from the claim text.